Datasheet Details
| Part number | IRF236 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 69.15 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 IRF236 Datasheet
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General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Key Features
- 8.1A and 6.5A, 275V and 250V.
- rDS(ON) = 0.45Ω and 0.68Ω.
- Single Pulse Avalanche Energy Rated.
- SOA is Power Dissipation Limited.
- Nanosecond Switching Speeds.
- Linear Transfer Characteristics.
- High Input Impedance.
- 275V, 250V DC Rated - 120V AC Line System Operation.
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF234 IRF235 IRF.
