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IRF234 - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 8.1A and 6.5A, 275V and 250V.
  • rDS(ON) = 0.45Ω and 0.68Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • 275V, 250V DC Rated - 120V AC Line System Operation.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF234 IRF235 IRF.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
IRF230 N-Channel Power MOSFET
IRF231 N-Channel Power MOSFET
IRF232 N-Channel Power MOSFET
IRF233 N-Channel Power MOSFET
IRF235 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor IRF234, IRF235, IRF236, IRF237 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17413. January 1998 Features • 8.1A and 6.5A, 275V and 250V • rDS(ON) = 0.45Ω and 0.