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IRF235 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: Semiconductor IRF234, IRF235, IRF236, IRF237 8.1A and 6.5A, 275V and 250V, 0.45 and 0.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 8.1A and 6.5A, 275V and 250V.
  • rDS(ON) = 0.45Ω and 0.68Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • 275V, 250V DC Rated - 120V AC Line System Operation.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF234 IRF235 IRF.

IRF235 from other manufacturers

Brand Logo Part Number Description Other Manufacturers
Inchange Semiconductor Logo IRF235 N-Channel MOSFET Transistor Inchange Semiconductor

More Datasheets from Intersil (now Renesas)

Part Number Description
IRF230 N-Channel Power MOSFET
IRF231 N-Channel Power MOSFET
IRF232 N-Channel Power MOSFET
IRF233 N-Channel Power MOSFET
IRF234 N-Channel Power MOSFET
IRF236 N-Channel Power MOSFET
IRF237 N-Channel Power MOSFET
IRF220 N-Channel Power MOSFET
IRF221 N-Channel Power MOSFET
IRF222 N-Channel Power MOSFET

IRF235 Distributor