IRF235
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Key Features
- 8.1A and 6.5A, 275V and 250V
- rDS(ON) = 0.45Ω and 0.68Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- 275V, 250V DC Rated - 120V AC Line System Operation
- Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol
