IRF231 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: Semiconductor IRF230, IRF231, IRF232, IRF233 8.0A and 9.0A, 150V and 200V, 0.4 and 0.

Datasheet Details

Part number	IRF231
Manufacturer	Intersil (now Renesas)
File Size	69.66 KB
Description	N-Channel Power MOSFET
Datasheet	IRF231_IntersilCorporation.pdf

General Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

8.0A and 9.0A, 150V and 200V.
rDS(ON) = 0.4Ω and 0.6Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF230 IRF231 IRF232 IRF233.

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More Datasheets from Intersil (now Renesas)

Part Number	Description
IRF230	N-Channel Power MOSFET
IRF232	N-Channel Power MOSFET
IRF233	N-Channel Power MOSFET
IRF234	N-Channel Power MOSFET
IRF235	N-Channel Power MOSFET
IRF236	N-Channel Power MOSFET
IRF237	N-Channel Power MOSFET
IRF220	N-Channel Power MOSFET
IRF221	N-Channel Power MOSFET
IRF222	N-Channel Power MOSFET