IRF221
Overview
Drain Current ID=5A@ TC=25℃ Drain Source Voltage- : VDSS= 150V(Min) Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) High Speed Applications.
| Part | IRF221 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 42.34 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF221 | Fairchild Semiconductor | N-Channel Power MOSFET |
| IRF221 | Intersil | N-Channel Power MOSFET |
| IRF221 | Harris | N-Channel Power MOSFETs |
| IRF221 | Samsung Semiconductor | N-Channel Power MOSFET |
| IRF222 | Samsung Semiconductor | N-Channel Power MOSFET |