IRF224
DESCRIPTION
- Drain Current ID=3.8A@ TC=25℃
- Drain Source Voltage-
: VDSS= 250V(Min)
- Static Drain-Source On-Resistance
: RDS(on) =1.1Ω(Max)
- High Speed Applications
APPLICATIONS
- Switching power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
250 V
Gate-Source Voltage
±20
Drain Current-continuous@ TC=25℃ 3.8 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient
3.12 30
℃/W ℃/W isc website：.iscsemi.cn
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor
- ELECTRICAL CHARACTERISTICS (TC=25℃)
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