Datasheet Details
| Part number | IRF224 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.46 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF224-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | IRF224 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.46 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF224-InchangeSemiconductor.pdf |
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·Drain Current ID=3.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.1Ω(Max) ·High Speed Applications APPLICATIONS ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 250 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3.8 A Total Dissipation@TC=25℃ 40 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient 3.12 30 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF224 | (IRF225) HEXFET Transistors | IR |
| Part Number | Description |
|---|---|
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