IRF1010E Datasheet - International Rectifier

IRF1010E, Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon.

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IRF1010E_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF1010E

Manufacturer:

International Rectifier

File Size:

250.75 KB

Description:

Power MOSFET

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC

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IRF1010E Power MOSFET International Rectifier

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