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IRF1010ELPbF - HEXFET Power MOSFET

Datasheet Summary

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF1010ES/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMB ER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L OR INT E RNAT IONAL RECT IF IE.

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Full PDF Text Transcription

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PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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