Part number: IRF1010ELPbF
Manufacturer: International Rectifier
File Size: 244.33KB
Download: 📄 Datasheet
Description: HEXFET Power MOSFET
l
IRF1010ESPbF IRF1010ELPbF
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
G S
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene.
Unclamped Inductive Test Circuit
V(BR)DSS tp
200
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Curre.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest powe.
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