Datasheet Specifications
- Part number
- IRF1018E
- Manufacturer
- INCHANGE
- File Size
- 242.00 KB
- Datasheet
- IRF1018E-INCHANGE.pdf
- Description
- N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1018E， IIRF1018E *.
Features
* Static drain-source on-resistance: RDS(on) ≤8.4mΩApplications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 79 IDM Drain Current-Single Pulsed 315 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 175 Tstg Storage TeIRF1018E Distributors
📁 Related Datasheet
📌 All Tags