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IRF1018E - N-Channel MOSFET

Datasheet Summary

Features

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  • Static drain-source on-resistance: RDS(on) ≤8.4mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRF1018E

Datasheet Details

Part number IRF1018E
Manufacturer INCHANGE
File Size 242.00 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF1018E Datasheet
Additional preview pages of the IRF1018E datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1018E， IIRF1018E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 79 IDM Drain Current-Single Pulsed 315 PD Total Dissipation @TC=25℃ 110 Tj Max.
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