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IRF1018ES - N-Channel MOSFET

IRF1018ES Description

Isc N-Channel MOSFET Transistor IRF1018ES *.

IRF1018ES Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IRF1018ES Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 79 56 315 PD Total Dissipation @TC=25℃ 110 Tch Max. Operating Ju

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Datasheet Details

Part number
IRF1018ES
Manufacturer
INCHANGE
File Size
254.20 KB
Datasheet
IRF1018ES-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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