IRF1018ESPbF, IRF1018EPbF Datasheet - International Rectifier

IRF1018ESPbF Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 7.1m: G max. 8.4m: S ID 79A D DS G TO-220AB IRF1018EPbF G Ga.

IRF1018ESPbF Features

* long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche curr

IRF1018EPbF-InternationalRectifier.pdf