Part number: IRF1010EPBF
Manufacturer: International Rectifier
File Size: 250.75KB
Download: 📄 Datasheet
Description: Power MOSFET
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to .
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
Image gallery
TAGS
📁 Related Datasheet
IRF1010E - Power MOSFET
(International Rectifier)
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche R.
IRF1010E - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1010E， IIRF1010E
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement .
IRF1010EL - Power MOSFET
(International Rectifier)
PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin.
IRF1010ELPbF - HEXFET Power MOSFET
(International Rectifier)
PD - 95444
Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switch.
IRF1010ES - Power MOSFET
(International Rectifier)
PD - 91720
IRF1010ES IRF1010EL
l l l l l l
Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin.
IRF1010ES - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IRF1010ESPbF - HEXFET Power MOSFET
(International Rectifier)
PD - 95444
Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switch.
IRF1010EZ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRF1010EZ，IIRF1010EZ
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching .
IRF1010EZ - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ult.
IRF1010EZL - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 95483
AUTOMOTIVE MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ult.
