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IRF1010ES Datasheet - International Rectifier

IRF1010ES Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF1010ES Features

* rop Ripple ≤ 5% [ ISD ]

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF1010ES/IRF1010EL D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2

IRF1010ES Datasheet (123.94 KB)

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Datasheet Details

Part number:

IRF1010ES

Manufacturer:

International Rectifier

File Size:

123.94 KB

Description:

Power mosfet.

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IRF1010ES Power MOSFET International Rectifier

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