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IRF1010ES - N-Channel MOSFET

IRF1010ES Description

isc N-Channel MOSFET Transistor *.

IRF1010ES Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF1010ES
* APPL

IRF1010ES Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 84 59 330 PD Total Dissipation 200 Tj Operati

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Datasheet Details

Part number
IRF1010ES
Manufacturer
INCHANGE
File Size
247.93 KB
Datasheet
IRF1010ES-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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