Datasheet Details
- Part number
- IRF1010ES
- Manufacturer
- INCHANGE
- File Size
- 247.93 KB
- Datasheet
- IRF1010ES-INCHANGE.pdf
- Description
- N-Channel MOSFET
IRF1010ES Description
isc N-Channel MOSFET Transistor *.
IRF1010ES Features
* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IRF1010ES
* APPL
IRF1010ES Applications
* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous;Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
84 59
330
PD
Total Dissipation
200
Tj
Operati
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