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K10N60 Fast IGBT

K10N60 Description

SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode * 75% lower Eoff compared to pr.

K10N60 Applications

* offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
* Very soft, fast recovery anti-parallel Emitter Controlled Diode PG-TO-220-3-1 PG-TO-247-3
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDE

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Fast IGBT Infineon
Infineon K10N60-like datasheet