SIGC158T120R3LE IGBT

Infineon

Description

SIGC158T120R3LE IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

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Datasheet Specifications

Part number: SIGC158T120R3LE
Manufacturer: Infineon ↗
File Size: 183.19 KB
Datasheet: SIGC158T120R3LE-Infineon.pdf
Description: IGBT

Features

* 1200V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:

Applications

* drives Chip Type VCE IC Die Size SIGC158T120R3LE 1200V 150A 12.56 x 12.56 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backsi

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📁 Related Datasheet

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SIGC158T120R3LE IGBT Infineon

Infineon SIGC158T120R3LE-like datasheet