SIGC41T120R3E IGBT

Infineon

SIGC41T120R3E Description

IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

SIGC41T120R3E Features

* 600V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling SIGC41T120R3E This chip is used for:

SIGC41T120R3E Applications

* drives C G E Chip Type VCE IC SIGC41T120R3E 1200V 35A Die Size 6.5 x 6.37 mm2 Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside me

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SIGC41T120R3E Datasheet Preview — Preview of SIGC41T120R3E PDF

Datasheet Details

Part number: SIGC41T120R3E
Manufacturer: Infineon ↗
File Size: 166.49 KB
Datasheet: SIGC41T120R3E-Infineon.pdf
Description: IGBT

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IGBT Infineon

Infineon SIGC41T120R3E-like datasheet