SIGC41T120R3E Datasheet (Infineon)

SIGC41T120R3E, IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7651M, L7651T, L7651E Date 06.07.20

SIGC41T120R3E Features

* 600V Trench & Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling SIGC41T120R3E This chip is used for:

* power module Applications:

* drives C G E Chip Type VCE IC SIGC41T120R3E 1200V 35A Die Si