Part number:
SIGC57T120R3E
Manufacturer:
File Size:
184.22 KB
Description:
Igbt.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.2 Change wafer size to 200 mm 2.3 Additional basic types L7667M, L7667T, L7667E; new gate pad des
SIGC57T120R3E Features
* 1200V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:
* power modules Applications:
* drives Chip Type VCE IC SIGC57T120R3E 1200V 50A Die Size 7.6 x 7.53 mm2 C
Datasheet Details
SIGC57T120R3E
184.22 KB
Igbt.
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