SIGC57T120R3E Datasheet - Infineon

SIGC57T120R3E IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.2 Change wafer size to 200 mm 2.3 Additional basic types L7667M, L7667T, L7667E; new gate pad des.

SIGC57T120R3E Features

* 1200V Trench & Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling This chip is used for:

* power modules Applications:

* drives Chip Type VCE IC SIGC57T120R3E 1200V 50A Die Size 7.6 x 7.53 mm2 C

SIGC57T120R3E-Infineon.pdf