SIGC57T120R3E - IGBT

Infineon

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Datasheet Details

Part number	SIGC57T120R3E
Manufacturer	Infineon
File Size	184.22 KB
Description	IGBT
Datasheet	SIGC57T120R3E-Infineon.pdf

SIGC57T120R3E Product details

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.2 Change wafer size to 200 mm 2.3 Additional basic types L7667M, L7667T, L7667E; new gate pad design Date 30.04.2010 02.07.2014 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.Legal Disclaimer The information given in this docume

Features

1200V Trench & Field Stop technology.
low turn-off losses.
short tail current.
positive temperature coefficient.
easy paralleling This chip is used for:.
power modules.

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Published: Feb 14, 2016 |