SIGC57T120R3LE IGBT

Infineon

SIGC57T120R3LE Description

SIGC57T120R3LE IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

SIGC57T120R3LE Features

* 1200V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:

SIGC57T120R3LE Applications

* drives Chip Type VCE IC SIGC57T120R3LE 1200V 50A Die Size 7.6 x 7.53 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside me

📥 Download Datasheet

SIGC57T120R3LE Datasheet Preview — Preview of SIGC57T120R3LE PDF

Datasheet Details

Part number: SIGC57T120R3LE
Manufacturer: Infineon ↗
File Size: 184.52 KB
Datasheet: SIGC57T120R3LE-Infineon.pdf
Description: IGBT

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IGBT Infineon

Infineon SIGC57T120R3LE-like datasheet