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SPD08P06PG Power-Transistor

SPD08P06PG Description

SIPMOS® Power-Transistor .

SPD08P06PG Features

* P-Channel
* Enhancement mode
* Avalanche rated
* dv /dt rated
* 175°C operating temperature
* Pb-free lead finishing; RoHS compliant ° Qualified according to AEC Q101 SPD08P06P G Product Summary V DS R DS(on),max ID -60 V 0.3 Ω -8.8 A PG-TO252-3

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Power-Transistor Infineon
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