SPD02N80C3

Power Transistor

Infineon

* New revolutionary high voltage technology

* Extreme dv/dt rated

* High peak current capability

* Qualified according to JEDEC1) for target applications Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 V 2.7 W 12 nC

* Pb-free lead plating; RoHS com

SPD02N80C3

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Power transistor.

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SPD02N80C3 Power Transistor Infineon

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