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SPB08P06P Power-Transistor

SPB08P06P Description

SIPMOS® Power-Transistor .

SPB08P06P Features

* P-Channel
* Enhancement mode
* Avalanche rated
* dv /dt rated
* 175°C operating temperature
* Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SP

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Power-Transistor Infineon Technologies
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