ITCH20160B2 - High Power RF LDMOS FET

Innogration

General Description

The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positiv.

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ITCH20160B2 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH20160B2
Manufacturer	Innogration
File Size	882.30 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH20160B2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH20160B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20160B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1805 MHz 18.3 51.7 52.9 52.6 55.0 1842.5 MHz 18.3 51.8 52.7 52.7 55.5 1880 MHz 18.2 51.4 51.7 52.4 55.