Datasheet Specifications
- Part number
- ITCH20160B2
- Manufacturer
- Innogration
- File Size
- 882.30 KB
- Datasheet
- ITCH20160B2-Innogration.pdf
- Description
- High Power RF LDMOS FET
Description
Innogration (Suzhou) Co., Ltd.Document Number: ITCH20160B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs Descript.Features
* High Efficiency and Linear Gain OperationsApplications
* with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20160B2ITCH20160B2 Distributors
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