Datasheet Details
| Part number | ITCH20160B2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 882.30 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
 ITCH20160B2-Innogration.pdf
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The ITCH20160B2 is High Power RF LDMOS FET designed by Innogration.
| Part number | ITCH20160B2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 882.30 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
ITCH20160B2-Innogration.pdf
|
|
|
|
The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D
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