Innogration Datasheet | Specifications & PDF Download

AC243433 2.3GHz-2.7GHz High Linearity Power Amplifier Features ■ 35dB Gain(Typ) ■ 33dBm P-1dB @ VCC=5V ■ 2.5% EVM WLAN @Pout=27dBm, VCC=5V ■ 320mA Qu

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AC3236W 0.2GHz to 1GHz 4W Power Amplifier Features 200~1000MHz Frequency Range 3.3V~5.0V Operation 32dB Gain 36dBm P1dB @VCC=5V 250mA Quiescent Curre

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MU1504 LDMOS TRANSISTOR Document Number: MU1504 Product Datasheet V3.0 1500MHz, 40W, 28V High Power RF LDMOS FETs Description The MU1504 is a 40-wat

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MQ051K1VPX LDMOS TRANSISTOR Document Number: MQ051K1VPX Preliminary Datasheet V1.0 1100W, 50V High Power RF LDMOS FETs Description The MQ051K1VPX is

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Innogration (Suzhou) Co., Ltd. 175W, 50V RF Power N-channel MOSFETs Description The VTSV02175 is a 175-watt, gold metallized N-channel MOSFETs, desi

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH16180B2 Preliminary Datasheet V2.0 1300MHz-1700MHz, 180W, 28V High Power RF LDMOS FETs Descript

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MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-b

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH16230B2 Preliminary Datasheet V1.1 1300MHz-1700MHz, 230W, 28V High Power RF LDMOS FETs Descript

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Innogration (Suzhou) Co., Ltd. Document Number: ITBH09200B Product Datasheet V2.0 700MHz-1000MHz, 200W, 28V High Power RF LDMOS FETs Description Th

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MX1520C LDMOS TRANSISTOR Document Number: MX1520C Product Datasheet V1.0 200W, 28V High Power RF LDMOS FETs Description The MX1520C is a 200-watt hi

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH25350D4 Preliminary Datasheet V1.0 2400-2500MHz, 350W, High Power RF LDMOS FETs Description The

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AC552228 4.9GHz to 5.9GHz LINEAR POWER AMPLIFIER Features 4.9~5.9GHz Frequency Range 3.3V~5.5V Operation 3.0% EVM@24dBm for 802.11a 54Mbps, 5.5V 3.0%

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH16045A Preliminary Datasheet V2.0 1300-1700MHz, 45W, 28V High Power RF LDMOS FETs Description T

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Innogration (Suzhou) Co., Ltd. Document Number: ITBH09260B Product Datasheet V1.0 700MHz-1000MHz, 260W, 28V High Power RF LDMOS FETs Description Th

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Innogration (Suzhou) Co., Ltd. 80W, 28V High Power RF LDMOS FETs Description The ITCH09080GX is a 80-watt, unmatched LDMOS FETs, designed for Wide-ban

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MU1014V LDMOS TRANSISTOR 140W, 50V High Power RF LDMOS FETs Description The MU1014V is a 140-watt, highly rugged, unmatched LDMOS FET, designed for wi

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MX1506VP LDMOS TRANSISTOR 60W, 50V High Power RF LDMOS FETs Description The MX1506VP is a 60-watt, highly rugged, thermally enhanced, unmatched LDMOS

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH22120B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 120W, 28V High Power RF LDMOS FETs Descript

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH22161B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 160W, 28V High Power RF LDMOS FETs Descript

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