Datasheet Details
| Part number | ITCH15401D4 |
|---|---|
| Manufacturer | Innogration |
| File Size | 564.09 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
 ITCH15401D4 Datasheet
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General Description
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Typical Performance (on Innogration 1.3GHz narrow band fixture with device soldered): Vdd=28V, Vgs=2.57V, Idq=400mA,Tc=25 degree C, Test signal: CW, Freq(MHz)Key Features
- Low cost, high reliable solution.
- High Efficiency and Linear Gain Operations.
- Integrated ESD Protection.
- Internally Matched for Ease of Use.
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
- Excellent thermal stability, low HCI drift.
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage.