ITCH16180B4 - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH16180B4
Manufacturer	Innogration
File Size	1.12 MB
Description	High Power RF LDMOS FET
Datasheet	ITCH16180B4 Datasheet
Additional preview pages of the ITCH16180B4 datasheet.

Product details

Description

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Optimized for Doherty.

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Published: Aug 5, 2018 |