Part ITCH16180B2
Description High Power RF LDMOS FET
Manufacturer Innogration
Size 1.01 MB
Innogration
ITCH16180B2

Overview

The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift Table
  • Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Pb-free, RoHS-compliant Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc VDD +32 Vdc Tstg -65