Innogration ITCH16180B2E
The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.| Part No. | ITCH16180B2E |
|---|---|
| Datasheet | ITCH16180B2E Download |
| Manufacturer |  Innogration |
| Description | High Power RF LDMOS FET |
| Buy | Stock & Price |
DESCRIPTION
ITCH16180B2●Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1390 MHz 18.8 52.8 55 53.7 57 1450 MHz 19.2 52 54 53.2 57.3 1529 MHz 18.4 51 54 52.2 57.6
●Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1350 MHz 19.6 52.4 53.5 53.5 57.8 1375 MHz 19.7 52.1 54 53.3 58.2 1400 MHz 19.4 51.7 53.5 53 58
●Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1440 MHz 19.8 52.2 55.8 53.2 59 1450 MHz 19.9 51.9 55 53 59 1470 MHz 19.8 51.5 54.9 52.7 59 ITCH16180B2E
FEATURES
● High Efficiency and Linear Gain Operations● Integrated ESD Protection
● Internally Matched for Ease of Use
● Excellent thermal stability, low HCI drift Table 1.
