ITCH16180B2E - High Power RF LDMOS FET

This page provides the datasheet information for the ITCH16180B2E, a member of the ITCH16180B2 High Power RF LDMOS FET family.

Product Overview

Innogration

📥 Download Datasheet

Datasheet Details

Part number	ITCH16180B2E
Manufacturer	Innogration
File Size	1.01 MB
Description	High Power RF LDMOS FET
Datasheet	ITCH16180B2E Datasheet
Additional preview pages of the ITCH16180B2E datasheet.

ITCH16180B2E Product details

Description

The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc VD.

📁 Similar Datasheet

ITC008 - Technical Traing Manual (Thomson)
ITC008 - Main Board (Thomson)
ITC008 - Deflection (Thomson)
ITC1000 - Pulsed Avionics (GHz Technology)
ITC1100 - Common base bipolar transistor (GHz Technology)
ITC117 - Integrated Telecom Circuits (Clare Inc.)
ITC117P - Integrated Telecom Circuits (Clare Inc.)
ITC117P - Integrated Telecom Circuits (IXYS)
ITC117PL - Integrated Telecom Circuits (IXYS)
ITC135P - Integrated Telecom Circuits (Clare Inc.)

Other Datasheets by Innogration

ITCH16180B2 - High Power RF LDMOS FET
ITCH16180B4 - High Power RF LDMOS FET
ITCH16180B4E - High Power RF LDMOS FET
ITCH16045A2 - High Power RF LDMOS FET
ITCH16045A2E - High Power RF LDMOS FET
ITCH16230B2 - High Power RF LDMOS FET
ITCH16230B2E - High Power RF LDMOS FET
ITCH15401D4 - High Power RF LDMOS FET

Published: Aug 5, 2018 |