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ITCH22210B2E - High Power RF LDMOS FET

This page provides the datasheet information for the ITCH22210B2E, a member of the ITCH22210B2 High Power RF LDMOS FET family.

Description

The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Datasheet preview – ITCH22210B2E

Datasheet Details

Part number ITCH22210B2E
Manufacturer Innogration
File Size 936.51 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH22210B2E Datasheet
Additional preview pages of the ITCH22210B2E datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH22210B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 210W, 28V High Power RF LDMOS FETs Description The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22210B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Frequency Gp P-1dB P-3dB D@P-3 (MHz) (dB) (dBm) (dBm) (%) 2110  16.9 53.1 54.0 54.5 2140 16.9 52.8 53.7 54.2 2170 16.8 52.5 53.5 54.
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