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ITCH22210B2E Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Download the ITCH22210B2E datasheet PDF. This datasheet also includes the ITCH22210B2 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (ITCH22210B2-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITCH22210B2E
Manufacturer Innogration
File Size 936.51 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH22210B2E Datasheet

General Description

The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH22210B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITCH22210B2 Preliminary Datasheet V1.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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