ITCH22120B2E Datasheet | Innogration

Innogration (Suzhou) Co., Ltd. Document Number: ITCH22120B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 120W, 28V High Power RF LDMOS FETs Description The ITCH22120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22120B2 - Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 m A, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (d B) P-1d B (d Bm) D@P-1 (%) P-3d B (d Bm) D@P-3 (%) 2110 MHz 2140 MHz 2170 MHz Features - High Efficiency and Linear Gain Operations - Integrated ESD Protection - Internally Matched for Ease of Use - Excellent thermal stability, low HCI drift - Large...