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ITCH22120B2E Datasheet High Power Rf Ldmos Fet

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH22120B2 Preliminary Datasheet V1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ITCH22120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH22120B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive.

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