ITCH22161B2E Datasheet | Innogration

Innogration (Suzhou) Co., Ltd. Document Number: ITCH22161B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH22161B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22161B2 - Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 m A, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Frequency Gp @ POUT=48d Bm P-1d B P-3d B D@P-3 (MHz) (d B) (d Bm) (d Bm) (%) 2110  2140 - Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered): VDD=28Volts, IDQ = 800 m A, POUT= 46d Bm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 d B @ 0.01% Probability on CCDF. Frequency POUT（d Bm） Gp (d B) D (%) ACPR5M (d Bc) 2110 MHz -30.5 2140...