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ITCH22160B4 Datasheet High Power Rf Ldmos Fet

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH22160B4 Preliminary Datasheet V1.

Datasheet Details

Part number ITCH22160B4
Manufacturer Innogration
File Size 928.63 KB
Description High Power RF LDMOS FET
Datasheet ITCH22160B4-Innogration.pdf

General Description

The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH22160B4 Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc 1/6 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH22160B4 Prelim.

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ITCH22160B4 Distributor