ITCH22160B4 - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH22160B4
Manufacturer	Innogration
File Size	928.63 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH22160B4 Datasheet
Additional preview pages of the ITCH22160B4 datasheet.

Product details

Description

The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc 1/6 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH22160B4 Prelim.

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Published: Aug 5, 2018 |