Datasheet Details
| Part number | ITCH22160B4 |
|---|---|
| Manufacturer | Innogration |
| File Size | 928.63 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
 ITCH22160B4 Datasheet
|
|
|
General Description
The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
TypKey Features
- High Efficiency and Linear Gain Operations.
- Integrated ESD Protection.
- Internally Matched for Ease of Use.
- Excellent thermal stability, low HCI drift.
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
- Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc 1/6 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH22160B4 Prelim.