Innogration ITCH22160B4
The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.| Part No. | ITCH22160B4 |
|---|---|
| Datasheet | ITCH22160B4 Download |
| Manufacturer |  Innogration |
| Description | High Power RF LDMOS FET |
| Buy | Stock & Price |
DESCRIPTION
ITCH22160B4●Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . ITCH22160B4E Freq (MHz) Gmax (dB) P-1dB (dBm) P-3dB (dBm) D@P-3 (%) 2110 17.4 49.1 49.9 54.4 2140 17.6 48.7 49.6 54.6 2170 17.2 48.3 49.3 54.2
●Typical Performance of Doherty Circuit (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =500 mA, VGPEAK=0.9V, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Freq (MHz) Gmax (dB) P-1dB (dBm) P-3dB (dBm) D@P-3 (%) 2110 14.9 50.6 52.8 59.2 2140 15.0 51.3 52.9 59.7 2170 14.9 51.8 52.7 59.0
●Typical Single-Carrier W-CDMA Performance of Doherty Circuit (On Test Fixture with device soldered): VDD=28Volts, IDQMAIN = 600 mA, VGPEAK=0.9V, Pout= 45dBm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 dB @ 0.01% Probability on CCDF. Freq (MHz) 2110 POUT（dBm） 45 Gp (dB) 14.5 D (%) 45.8 ACPR5M (dBc) -27.1 2140 45...
