ITCH22160B4E Datasheet | Innogration

Innogration (Suzhou) Co., Ltd. Document Number: ITCH22160B4 Preliminary Datasheet V1.0 2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22160B4 - Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 m A, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Freq (MHz) Gmax (d B) P-1d B (d Bm) P-3d B (d Bm) D@P-3 (%) 2110 2140 - Typical Performance of Doherty Circuit (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =500 m A, VGPEAK=0.9V, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Freq (MHz) Gmax (d B) P-1d B (d Bm) P-3d B (d Bm) D@P-3 (%) 2110 2140 - Typical Single-Carrier W-CDMA Performance of Doherty Circuit (On Test Fixture with device soldered): VDD=28Volts, IDQMAIN = 600 m A, VGPEAK=0.9V, Pout= 45d Bm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 d B @ 0.01% Probability on CCDF. Freq (MHz) 2110 POUT（d Bm） 45 Gp (d B) 14.5 D (%) 45.8 ACPR5M (d Bc) -27.1 2140 -29.0...