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ITCH22160B4E

Manufacturer: Innogration

ITCH22160B4E datasheet by Innogration.

This datasheet includes multiple variants, all published together in a single manufacturer document.

ITCH22160B4E datasheet preview

ITCH22160B4E Datasheet Details

Part number ITCH22160B4E
Datasheet ITCH22160B4E ITCH22160B4 Datasheet (PDF)
File Size 928.63 KB
Manufacturer Innogration
Description High Power RF LDMOS FET
ITCH22160B4E page 2 ITCH22160B4E page 3

ITCH22160B4E Overview

The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22160B4 Typical Performance of Single Section (On Innogration fixture with device soldered):.

ITCH22160B4E Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Pb-free, RoHS-pliant
  • 10 to +10
  • 65 to +150
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