ITCH22210B2
ITCH22210B2 is High Power RF LDMOS FET manufactured by Innogration.
Description
The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
- Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 m A, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Frequency
Gp
P-1d B
P-3d B
D@P-3
(MHz)
(d B)
(d Bm)
(d Bm)
(%)
2110
2140
ITCH22210B2E
- Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered):
VDD=28Volts, IDQ = 780 m A, POUT= 47.5d Bm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 d B @ 0.01% Probability on CCDF.
Frequency POUT（d Bm）
Gp (d B)
D (%)
ACPR5M (d Bc)
2110...
