Innogration ITCH22210B2
The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.| Part No. | ITCH22210B2 |
|---|---|
| Datasheet | ITCH22210B2 Download |
| Manufacturer |  Innogration |
| Description | High Power RF LDMOS FET |
| Buy | Stock & Price |
DESCRIPTION
ITCH22210B2●Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Frequency Gp P-1dB P-3dB D@P-3 (MHz) (dB) (dBm) (dBm) (%) 2110 16.9 53.1 54.0 54.5 2140 16.9 52.8 53.7 54.2 2170 16.8 52.5 53.5 54.4 ITCH22210B2E
●Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered): VDD=28Volts, IDQ = 780 mA, POUT= 47.5dBm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 dB @ 0.01% Probability on CCDF. Frequency POUT（dBm） Gp (dB) D (%) ACPR5M (dBc) 2110 MHz 47.5 16.5 33.8 -30.8 2140 MHz 47.5 16.3 34.6 -30.8 2170 MHz 47.5 16.2 35.4 -30.9
FEATURES
● High Efficiency and Linear Gain Operations● Integrated ESD Protection
● Internally Matched for Ease of Use
● Excellent thermal stability, low HCI drift
● Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
● Pb-free, RoHS-compliant Table 1.
MAXIMUM RATINGS
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