MX0520 - High Power RF LDMOS FET

Innogration

General Description

The MK0520 is a 200-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1 GHz.

VDD = 28 Volts, IDQ = 1000 mA, CW.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excell.

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MX0520 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	MX0520
Manufacturer	Innogration
File Size	269.60 KB
Description	High Power RF LDMOS FET
Datasheet	MX0520 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX0520 LDMOS TRANSISTOR Document Number: MX0520 Product Datasheet V1.0 200W, 28V High Power RF LDMOS FETs Description The MK0520 is a 200-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 1 GHz. MX0520 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1000 mA, CW. Frequency Gp (dB) P-1dB (W) 1000 MHz 17 200 D@P-1 (%) 60  Typical Performance (On Innogration fixture with device soldered):  VDD = 28 Volts, IDQ = 850 mA, CW. Frequency Gp (dB) P-1dB (W) D@P-1 (%) 10 MHz 19.8 80 45.1 20 MHz 20.2 114 55.6 30 MHz 20.0 127 58.8 60 MHz 20.5 157 65.1 100 MHz 20.2 141 50.4 200 MHz 20.3 185 58.1 300 MHz 20.3 186 55.