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MX0560VPX - High Power RF LDMOS FET

General Description

The MX0560VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.6 GHz.

It is the thermally enhancement of its peer MK0560VPX.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Nega.

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Datasheet Details

Part number MX0560VPX
Manufacturer Innogration
File Size 738.70 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MX0560VPX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX0560VPX LDMOS TRANSISTOR 550W, 50V High Power RF LDMOS FETs Description The MX0560VPX is a 550-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.6 GHz. It is the thermally enhancement of its peer MK0560VPX. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications. Document Number: MX0560VPX Preliminary Datasheet V1.0 MX0560VPX  Typical performance(on 325MHz test board with device soldered): VDD = 50 Volts, IDQ = 95 mA, CW. Freq Pout Pout Gain Eff (MHz) (dBm) (W) (dB) (%) 325 55.7 368 22.3 65.7 325 56.0 417 21.8 68.5 325 56.6 459 21.2 72.8 325 57.0 495 20.5 72.6 325 57.