ITDE10600D4 - High Power RF LDMOS FET

Datasheet Summary

Description

The ITDE10600D4 is a 600-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz.

Typical Performance (On Innogration fixture with d

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Optimized for Doherty.

Innogration

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Datasheet Details

Part number	ITDE10600D4
Manufacturer	Innogration
File Size	438.37 KB
Description	High Power RF LDMOS FET
Datasheet	ITDE10600D4 Datasheet
Additional preview pages of the ITDE10600D4 datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. 1GHz, 600W, 40V High Power RF LDMOS FETs Description The ITDE10600D4 is a 600-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz. It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 16 600 69 915MHz 100us,10%, Pulsed 16.5 630 70 Recommended driver: MU1503V operated at 40V Document Number: ITDE10600D4 Preliminary Datasheet V1.

Published: Aug 5, 2018 |