ITDE10600D4E
Description
The ITDE10600D4 is a 600-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz. It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 16 600 69 915MHz 100us,10%, Pulsed 16.5 630 70 Recommended driver: MU1503V operated at 40V Document Number: ITDE10600D4 Preliminary Datasheet V1.0 ITDE10600D4 ITDE10600D4E.
Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Optimized for Doherty Applications
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Excellent thermal stability, low HCI drift
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table
- Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table
- Thermal Characteristics Characteristic Thermal Resistance, Junction to Case TC= 85°C, TJ=200°C, DC test Table
- ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Symbol VDSS VGS VDD Tstg TC TJ Symbol RJC Value 95 -10 to +10 +42 -65 to +150 +150 +225 Value Class Class 2 Unit Vdc Vdc Vdc °C °C °C Unit °C/W 1/5 Innogration (Suzhou) Co., Ltd. Document Number: ITDE10600D4 Preliminary Datasheet V1.0 Table
