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ITDE10600D4E - High Power RF LDMOS FET

Download the ITDE10600D4E datasheet PDF. This datasheet also covers the ITDE10600D4 variant, as both devices belong to the same high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ITDE10600D4 is a 600-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz.

Typical Performance (On Innogration fixture with d

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ITDE10600D4-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITDE10600D4E
Manufacturer Innogration
File Size 438.37 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITDE10600D4E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Innogration (Suzhou) Co., Ltd. 1GHz, 600W, 40V High Power RF LDMOS FETs Description The ITDE10600D4 is a 600-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz. It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 16 600 69 915MHz 100us,10%, Pulsed 16.5 630 70 Recommended driver: MU1503V operated at 40V Document Number: ITDE10600D4 Preliminary Datasheet V1.