VTSU011K2
VTSU011K2 is RF Power N-channel MOSFET manufactured by Innogration.
Description
The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for pulsed applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.
- Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 m A, Pulse CW, Pulse Width=1ms, Duty cycle=10%
Frequency Gp (d B)
POUT (W)
D (%)
120 MHz
Document Number: VTSU011K2 Production Datasheet V1.0
Features
- mon source configuration, push pull
- Excellent thermal stability, low HCI drift
- Low RDS(on)
- Pb-free, Ro HS-pliant
Table 1. Maximum Ratings Rating
Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
Symbol V(BR)DSS VDGR
VGS Tstg TC TJ
Drain 1
Gate 2
Source 3
Figure 1. Pin Connection
Value 200 200 -20 to +20 -65 to 150 150 200
Unit V V...
