• Part: VTSV02175
  • Description: RF Power N-channel MOSFET
  • Category: MOSFET
  • Manufacturer: Innogration
  • Size: 872.92 KB
Download VTSV02175 Datasheet PDF
Innogration
VTSV02175
VTSV02175 is RF Power N-channel MOSFET manufactured by Innogration.
Description The VTSV02175 is a 175-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF mercial and industrial applications at frequencies up to 200 MHz. - Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 250 m A, CW. Frequency Gp (d B) POUT (W) D (%) 175 MHz Document Number: VTSV02175 Product Datasheet V1.2 Features - Gold metallization - mon source configuration - Excellent thermal stability, low HCI drift - Low RDS(on) - Pb-free, Ro HS-pliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol V(BR)DSS VDGR VGS ID PDISS Tstg TC TJ Drain Gate 13 Source 24 Figure 1. Pin Connection Value 130 130 -40 to +40 20 400 -65 to 150 150 200 Unit V V V A W...