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VTSU01900 Datasheet PDF

Innogration VTSU01900

The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.
Part No. VTSU01900
Datasheet VTSU01900 Download
Manufacturer
Innogration
Description RF Power N-channel MOSFET
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VTSU01900 datasheet page 1 preview

DESCRIPTION

● Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 20 900 65
●Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, CW Frequency Gp (dB) POUT (W) D (%) 120 MHz 24 550 68

FEATURES

● Common source configuration, push pull
● Excellent thermal stability, low HCI drift
● Low RDS(on)
● Pb-free, RoHS-compliant Document Number: VTSU01900 Production Datasheet V1.0 VTSU01900 Drain 1 Gate 2 Source 3 Figure 1. Pin Connection Table 1.

MAXIMUM RATINGS

Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Drain Current Power Dissipati
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