VTSU01900
VTSU01900 is RF Power N-channel MOSFET manufactured by Innogration.
Description
The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.
- Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 m A, Pulse CW, Pulse Width=1ms, Duty cycle=10%
Frequency Gp (d B)
POUT (W)
D (%)
120 MHz
- Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 m A, CW
Frequency Gp (d B)
POUT (W)
D (%)
120 MHz
Features
- mon source configuration, push pull
- Excellent thermal stability, low HCI drift
- Low RDS(on)
- Pb-free, Ro HS-pliant
Document Number: VTSU01900 Production Datasheet V1.0
Drain 1
Gate 2
Source 3
Figure 1. Pin Connection
Table 1. Maximum Ratings Rating
Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Drain Current Power...