• Part: VTSU01900
  • Description: RF Power N-channel MOSFET
  • Category: MOSFET
  • Manufacturer: Innogration
  • Size: 859.64 KB
Download VTSU01900 Datasheet PDF
Innogration
VTSU01900
VTSU01900 is RF Power N-channel MOSFET manufactured by Innogration.
Description The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications. - Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 m A, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (d B) POUT (W) D (%) 120 MHz - Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 m A, CW Frequency Gp (d B) POUT (W) D (%) 120 MHz Features - mon source configuration, push pull - Excellent thermal stability, low HCI drift - Low RDS(on) - Pb-free, Ro HS-pliant Document Number: VTSU01900 Production Datasheet V1.0 Drain 1 Gate 2 Source 3 Figure 1. Pin Connection Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Drain Current Power...