ITCH16230B2 - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH16230B2
Manufacturer	Innogration
File Size	785.36 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH16230B2 Datasheet
Additional preview pages of the ITCH16230B2 datasheet.

Product details

Description

The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,CW.

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case TC= 85C, TJ=200C, DC test.
Large Positive and Negative Gate.

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Published: Aug 5, 2018 |