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ITCH16230B2 - High Power RF LDMOS FET

Datasheet Summary

Description

The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case TC= 85C, TJ=200C, DC test.
  • Large Positive and Negative Gate.

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Datasheet preview – ITCH16230B2

Datasheet Details

Part number ITCH16230B2
Manufacturer Innogration
File Size 785.36 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH16230B2 Datasheet
Additional preview pages of the ITCH16230B2 datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH16230B2 Preliminary Datasheet V1.1 1300MHz-1700MHz, 230W, 28V High Power RF LDMOS FETs Description The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH16230B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,CW. Frequency Gp (dB) POUT (W ) D@ (%) 1470 MHz 16.5 240 62.2 1500 MHz 15.9 214 62.1 1525 MHz 15.4 191 62.4 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, Vgs=2.
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