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ITCH16230B2E Datasheet

Manufacturer: Innogration

This datasheet includes multiple variants, all published together in a single manufacturer document.

ITCH16230B2E datasheet preview

Datasheet Details

Part number ITCH16230B2E
Datasheet ITCH16230B2E ITCH16230B2 Datasheet (PDF)
File Size 785.36 KB
Manufacturer Innogration
Description High Power RF LDMOS FET
ITCH16230B2E page 2 ITCH16230B2E page 3

ITCH16230B2E Overview

The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH16230B2 Typical Performance (On Innogration fixture with device soldered):.

ITCH16230B2E Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Pb-free, RoHS-pliant
  • 10 to +10 +32
  • 65 to +150 +150 +225
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