Description
The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.
Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,CW.
Features
- High Efficiency and Linear Gain Operations.
- Integrated ESD Protection.
- Internally Matched for Ease of Use.
- Excellent thermal stability, low HCI drift
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case TC= 85C, TJ=200C, DC test.
- Large Positive and Negative Gate.
ITCH16230B2E Datasheet
