ITCH16230B2E - High Power RF LDMOS FET

This page provides the datasheet information for the ITCH16230B2E, a member of the ITCH16230B2 High Power RF LDMOS FET family.

Product Overview

Innogration

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Datasheet Details

Part number	ITCH16230B2E
Manufacturer	Innogration
File Size	785.36 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH16230B2E Datasheet
Additional preview pages of the ITCH16230B2E datasheet.

ITCH16230B2E Product details

Description

The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case TC= 85C, TJ=200C, DC test.
Large Positive and Negative Gate.

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Published: Aug 5, 2018 |