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28F010 1024K (128K x 8) CMOS FLASH MEMORY

28F010 Description

28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical B.
Symbol A0. A16 DQ0. DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched.

28F010 Features

* g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec Order 231369) Y Y Y Y Y Y Y Y Y

28F010 Applications

* requiring large amounts of flash memory Figure 3 illustrates the TSOP Serpentine layout With cost-effective in-system reprogramming extended cycling capability and true nonvolatility the 28F010 offers advantages to the alternatives EPROMs EEPROMs battery backed static RAM or disk EPROM-compatible re

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Datasheet Details

Part number
28F010
Manufacturer
Intel
File Size
405.78 KB
Datasheet
28F010_IntelCorporation.pdf
Description
1024K (128K x 8) CMOS FLASH MEMORY

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1024K 128K CMOS FLASH MEMORY Intel
Intel 28F010-like datasheet