28F010 1024K (128K x 8) CMOS FLASH MEMORY

Intel

Description

28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical B.
Symbol A0. A16 DQ0. DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched.

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Datasheet Specifications

Part number: 28F010
Manufacturer: Intel
File Size: 405.78 KB
Datasheet: 28F010_IntelCorporation.pdf
Description: 1024K (128K x 8) CMOS FLASH MEMORY

Features

* g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec Order 231369) Y Y Y Y Y Y Y Y Y

Applications

* requiring large amounts of flash memory Figure 3 illustrates the TSOP Serpentine layout With cost-effective in-system reprogramming extended cycling capability and true nonvolatility the 28F010 offers advantages to the alternatives EPROMs EEPROMs battery backed static RAM or disk EPROM-compatible re

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28F010 1024K 128K CMOS FLASH MEMORY Intel

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