28F016XD Datasheet - Intel

28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

at any time, without notice. The 28F016XD may contain design defects or errors known as errata. Current characterized errata are available upon request. *Third-party brands and names are the property of their respective owners. Contact your local Intel sales office or your distributor to obtain.

E n n n n n n 28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY n n n n n n n 56-Lead TSOP Type I Package Backwards-Compatible with 28F008SA Command Set 2 µA Typical Deep Power-Down Current 1 mA Typical I CC Active Current in Static Mode 32 Separately-Erasable/Lockable 64-Kbyte Blocks 1 Million Erase Cycles per Block State-of-the-Art 0.6 µm ETOX™ IV Flash Technology 85 ns Access Time (t RAC)  Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus  RAS# and CAS# Co.

28F016XD Features

* extended cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows

28F016XD Datasheet (1.13 MB)