2N5398
InterFET
387.45kb
N-channel jfet. The -25V InterFET 2N5397 and 2N5398 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakage
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2N5397 - N-Channel JFETs
(National Semiconductor)
a
Process 90
2N5397, 2N5398 N-Channel JFETs
General Description
The 2N5397 thru 2N5398 series of N channel JFETs is designed for VHF/UHF mon-so.
2N5397 - N-Channel JFET
(InterFET)
InterFET
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2N5397-8
2N5397, 2N5398 N-Channel JFET
Features
• InterFET N0026L Geometry • Low Noise: 3 nV.
2N5398 - N-Channel JFETs
(National Semiconductor)
a
Process 90
2N5397, 2N5398 N-Channel JFETs
General Description
The 2N5397 thru 2N5398 series of N channel JFETs is designed for VHF/UHF mon-so.
2N5301 - POWER TRANSISTORS
(ON Semiconductor)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5301/D
High-Power NPN Silicon Transistors
. . . for use in power amplifier and switc.
2N5301 - Bipolar NPN Device
(Seme LAB)
2N5301
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N5301 - Silicon NPN Power Transistors
(Inchange Semiconductor)
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5301 2N5302 2N5303
DESCRIPTION With TO-3 package Complement to type 2N4.
2N5301 - NPN SILICON POWER TRANSISTOR
(SSDI)
.
2N5301 - Bipolar Transistor
(Multicomp)
Bipolar Transistor
Features:
• High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA • Low Collector Emitter saturation Voltage VCE(sa.
2N5301 - Silicon NPN Transistor
(NTE)
2N5301 & 2N5303 Silicon NPN Transistor High Power Audio Amplifier
TO−3 Type Package
Description: The 2N5301 and 2N5303 are silicon NPN transistors in .
2N5301 - N-CHANNEL JFET
(Micross)
2N5301 N-CHANNEL JFET
Linear Systems replaces discontinued LF5301 and PF5301
The 2N5301 is a very High Input Impedance N-Channel JFET amplifier
The 2.
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