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IFN412 Datasheet - InterFET

IFN412 N-Channel Matched Dual Silicon Junction Field-Effect Transistor

8/2014 IFN410, IFN411, IFN412 N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ Improved Replacements for the U410, U411, & U412 ∙ Low Noise Differential Amplifier ∙ Differential Amplifier ∙ Wide-Band Amplifier Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -40V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 375 mW Power Derating 3.0 mW/oC Operating Temperature Range Storage Temperature Range -55°C to +125°C -6.

IFN412 Datasheet (461.76 KB)

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Datasheet Details

Part number:

IFN412

Manufacturer:

InterFET

File Size:

461.76 KB

Description:

N-channel matched dual silicon junction field-effect transistor.

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IFN412 N-Channel Matched Dual Silicon Junction Field-Effect Transistor InterFET

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