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N0132H - Process Geometry

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InterFET

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N0132H Process Geometry by InterFET - Datasheet Preview — Datasheet preview – N0132H

Datasheet Details

Part number	N0132H
Manufacturer	InterFET
File Size	360.32 KB
Description	Process Geometry
Datasheet	N0132H Datasheet
Additional preview pages of the N0132H datasheet.

Product details

Description

The InterFET N0132H Geometry is ideal for low noise high gain applications.

Features

Low Noise: 1.5 nV/√Hz Typical.
Typical Input Capacitance: 12pF.
Typical Breakdown Voltage: -60V.
High Input Impedance.
Small Die: 518um X 518um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

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Published: Jul 29, 2024 |