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N0132S - Process Geometry

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InterFET

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N0132S Process Geometry by InterFET - Datasheet Preview — Datasheet preview – N0132S

Datasheet Details

Part number	N0132S
Manufacturer	InterFET
File Size	362.45 KB
Description	Process Geometry
Datasheet	N0132S Datasheet
Additional preview pages of the N0132S datasheet.

Product details

Description

The InterFET N0132S Geometry is ideal for low noise high gain applications.

Features

Low Noise: 1.2 nV/√Hz Typical.
Typical Input Capacitance: 13pF.
Typical Breakdown Voltage: -45V.
High Input Impedance.
Small Die: 518um X 518um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

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Published: Jun 13, 2020 |