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N0132S

Process Geometry

N0132S Features

* Low Noise: 1.2 nV/√Hz Typical

* Typical Input Capacitance: 13pF

* Typical Breakdown Voltage: -45V

* High Input Impedance

* Small Die: 518um X 518um X 203um

* Bond Pads: 90um X 90um

* Substrate Connected to Gate

* Au Back-Side Finish A

N0132S Datasheet (362.45 KB)

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Preview of N0132S PDF

Datasheet Details

Part number:

N0132S

Manufacturer:

InterFET

File Size:

362.45 KB

Description:

Process geometry.

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