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F-38
01/99
NJ450L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
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Devices in this Databook based on the NJ450L Process. Datasheet
2N6550 IF4500 IF4501 IFN860
G
Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate.
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NJ450L Datasheet
