NJ450L Datasheet (InterFET) - Silicon Junction Field-Effect Transistor

NJ450L, Silicon Junction Field-Effect Transistor

F-38 01/99 NJ450L Process Silicon Junction Field-Effect Transistor Low-Current Low Gate Leakage Current High Input Impedance Absolute maximum ratings at 25¡C free-air temperature.

Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C 65°C to +175°C S-D G Devices in this Databook based on the NJ450L Process.

Datasheet 2N6550 IF4500 IF4501 IFN860 G Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq.

Substrate is also Gate.

S-